BSS84PW H6327

BSS84PW SIPMOS  Small-Signal-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Drain source voltage VDS Drain-source on-state resistance RDS(on) Continuous drain current ID -60 V 8 W -0.15 A 3 2 • Qualified according to AEC Q101 1 • Halogen-free according to IEC61249-2-21 Marking Tape and Reel Type Package BSS84PW PG-SOT-323 H6327:3000pcs/r. YBs VSO05561 Pin 1 PIN 2 PIN 3 G S D Maximum Ratings,at T j = 25 °C, unless otherwise specified Symbol Parameter Value Unit Continuous drain current -0.15 A ID T A = 25 °C ID puls -0.6 Avalanche energy, single pulse EAS 2.61 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR 0.03 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.3 W -55...+150 °C Pulsed drain current T A = 25 °C I D = -0.15 A , V DD = -25 V, RGS = 25 W mJ kV/µs I S = -0.15 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Operating and storage temperature Tj , Tstg 55/150/56 IEC climatic category; DIN IEC 68-1 ESD Class JESF22-A114-HBM Rev 2.0 Class 0 Page 1 2016-06-21 BSS84PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 110 @ min. footprint - - 420 @ 6 cm 2 cooling area 1) - - 350 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -20 µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain-source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10.5 25 W RDS(on) - 6.9 12 RDS(on) - 4.6 8 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -2.7 V, I D = -0.01 A Drain-source on-state resistance VGS = -4.5 V, I D = -0.12 A Drain-source on-state resistance VGS = -10 V, ID = -0.15 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.0 Page 2 2016-06-21 BSS84PW Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.08 0.16 - S pF Dynamic Characteristics Transconductance g fs V DS£2*ID*R DS(on)max , ID=0.15A Input capacitance Ciss V GS=0V, VDS=-25V, - 15.3 19.1 Output capacitance Coss f=1MHz - 5.8 7.3 Reverse transfer capacitance Crss - 3 3.8 Turn-on delay time t d(on) - 6.7 10 Rise time tr - 16.2 24.3 Turn-off delay time t d(off) - 8.6 12.9 Fall time tf - 20.5 30.8 - 0.25 0.38 - 0.3 0.45 - 1 1.5 V(plateau) V DD=-48V, ID=-0.15A - -3.4 - IS - - - - V DD=-30V, V GS=-4.5V, ID=-0.12A, RG=25W ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=-48V, I D=-0.15A V DD=-48V, I D=-0.15A, nC V GS=0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous T A=25°C -0.15 A forward current Inverse diode direct current, I SM -0.6 pulsed Inverse diode forward voltage VSD V GS=0V, IF=-0.15A - -0.84 -1.12 V Reverse recovery time t rr V R=-30V, I F=l S, - 23.6 35.4 ns Reverse recovery charge Q rr diF/dt=100A/µs - 11.6 17.4 nC Rev 2.0 Page 3 2016-06-21 BSS84PW Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) parameter: VGS ³ 10 V BSS84PW 0.32 -0.16 W A 0.24 -0.12 0.20 -0.10 ID Ptot BSS84PW 0.16 -0.08 0.12 -0.06 0.08 -0.04 0.04 -0.02 0.00 0 20 40 60 80 100 120 °C 0.00 0 160 20 40 60 80 100 120 TA TA Safe operating area Transient thermal impedance I D = f ( V DS ) ZthJA = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T 1 BSS84PW -10 160 °C 10 3 BSS84PW A K/W -10 0 Z thJC tp = 40.0µs ID 100 µs /I D -10 = -1 RD S( on V 1 ms DS ) 10 2 10 ms D = 0.50 0.20 10 1 0.10 0.05 -10 -2 0.02 single pulse DC -10 -3 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 2.0 10 0 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 0.01 10 1 s 10 3 tp Page 4 2016-06-21 BSS84PW Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS BSS84PW BSS84PW 26 Ptot = 0W A g f W VGS [V] a -2.5 e -0.28 d ID -0.24 -0.20 -0.16 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -6.0 a b c d 22 20 RDS(on) -0.36 18 16 14 12 c 10 -0.12 8 6 b -0.08 4 -0.04 2 a 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V e g VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g -6.0 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A -5.0 f VDS -0.30 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max gfs = f(ID ); Tj=25°C parameter: tp = 80 µs parameter: gfs -0.30 0.22 S A 0.18 gfs ID 0.16 -0.20 0.14 0.12 -0.15 0.10 0.08 -0.10 0.06 0.04 -0.05 0.02 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 Rev 2.0 V -5.0 VGS Page 5 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 ID 2016-06-21 BSS84PW Drain-source on-resistance Gate threshold voltage RDS(on) = f(Tj) VGS(th) = f (Tj) parameter: ID = -0.17A, V GS = -10 V parameter: VGS = VDS , ID = -20 µA -2.5 16 W 12 V GS(th) RDS(on) V max. 10 max. -1.5 typ. -1.0 min. 8 6 typ. 4 -0.5 2 0 -60 -20 20 60 100 0.0 -60 160 °C Tj -20 20 60 100 180 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 2 -10 0 BSS84PW A pF -10 -1 C IF Ciss 10 1 Coss Crss -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 V -30 VDS Rev 2.0 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Page 6 2016-06-21 BSS84PW Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -0.15 A pulsed W par.: ID = -0.15 A , VDD = -25 V, R GS = 25 BSS84PW 3.0 -16 V mJ VGS E AS -12 2.0 1.5 -10 0,2 VDS max 0,8 VDS max -8 -6 1.0 -4 0.5 -2 0.0 25 45 65 85 105 125 165 °C Tj 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS84PW -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Rev 2.0 Page 7 2016-06-21 BSS84PW Package Outline SOT-323 Footprint Soldering type: Reflow soldering Soldering type: Wave soldering Tape and Reel Rev 2.0 Page 8 2016-06-21 -60VSIPMOSSmallSignalTransistor BSS84PW RevisionHistory BSS84PW Revision:2016-06-27,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-06-27 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2016-06-27